Gallium Nitride (GaN) has made significant strides in the field of power electronics due to its exceptional properties. Let%27s explore how GaN is utilized in power electronics:

1. High Electron Mobility Transistors (HEMTs):
- GaN power devices belong to the class of high-electron-mobility transistors (HEMTs).
- These transistors feature a two-dimensional electron gas (2DEG) created by a junction between two crystalline materials with diverse atomic spacing and band gaps⁶.
- GaN HEMTs offer higher switching frequencies compared to silicon-based FETs, leading to improved energy conversion efficiency.

2. Applications of GaN in Power Electronics:
- Low-Voltage Power Supplies:
- GaN devices find applications in low-voltage (

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