The avalanche breakdown voltage in a field-effect transistor (FET) refers to the voltage at which the reverse-biased body-drift diode breaks down, allowing significant current to flow between the source and drain by the avalanche multiplication process. During this breakdown, the p-n junction acting as a diode no longer blocks voltage, and impact ionization leads to a sudden increase in current. The avalanche breakdown voltage ((BVDSS)) typically ranges from 6V to 50V, depending on the specific FET. To find the exact breakdown voltage for a particular FET, refer to its datasheet²⁴. If you have further questions, feel free to ask!

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(1) What is the Breakdown Voltage, BV DS , of a FET Transistor?. http://www.learningaboutelectronics.com/Articles/What-is-the-breakdown-voltage-of-a-FET-transistor.
(2) By Vrej Barkhordarian, International Rectifier, El Segundo, Ca.. https://www.infineon.com/dgdl/Infineon-power_mosfet_basics-Article-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018e625961741a0e.
(3) Power MOSFET avalanche design guidelines - Infineon Technologies. https://www.infineon.com/dgdl/Infineon-Power_MOSFET_avalanche_design_guidelines-ApplicationNotes-v01_00-EN.pdf?fileId=8ac78c8c882315570188295e1c6a22f7.
(4) What is the Gate-Source Voltage, VGS, of a FET Transistor?. https://www.learningaboutelectronics.com/Articles/What-is-the-gate-source-voltage-VGS-of-a-JFET-transistor.

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