What is the electron mobility of GaN?

The electron mobility of Gallium Nitride (GaN) is a crucial parameter in semiconductor physics. Let%27s delve into the details:

1. Intrinsic Properties:
- GaN is an extrinsic n-type semiconductor, meaning it predominantly carries negative charge carriers (electrons).
- At room temperature, the electron mobility in GaN is approximately 440 cm²/V·s for the purest material with an electron concentration of around 10¹⁷ cm⁻³ ³.
- Above room temperature, transport is mainly influenced by polar-optical scattering and at lower temperatures by impurity scattering ³.
- Crystals with an electron concentration larger than 8x10¹⁸ cm⁻³ exhibit metallic conduction without significant variation in electron mobility between 10 K and 300 K ³.

2. Temperature Dependence:
- The electron mobility decreases as the temperature decreases.
- Experimental data shows that the electron mobility in GaN decreases with decreasing temperature ³.

3. Comparison with Silicon:
- Silicon, a widely used semiconductor, has an electron mobility of approximately 1500 cm²/V·s ¹⁴.
- In contrast, GaN boasts an electron mobility of approximately 2000 cm²/V·s ¹⁴.
- This means that electrons in GaN crystals can move over 30% faster than those in silicon ¹.

In summary, GaN%27s superior electron mobility makes it an attractive material for high-power and high-frequency electronic devices, such as high-electron mobility transistors (HEMTs) ⁴. If you have any more questions or need further clarification, feel free to ask!

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