Technical Parameter
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
12 V
Current - Continuous Drain (Id) @ 25℃
22A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Rds On (Max) @ Id, Vgs
9.3mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id
1.1V @ 250μA
Gate Charge (Qg) (Max) @ Vgs
6.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
997 pF @ 6 V
Power Dissipation (Max)
2.7W (Ta)
Operating Temperature
-55 ℃ ~ 150 ℃ (TJ)
Mounting Type
Surface Mount
Supplier Device Package
6-WSON (2x2)
Package / Case
6-WDFN Exposed Pad
