Technical Parameter
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25℃
192A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
4.2mOhm @ 115A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Gate Charge (Qg) (Max) @ Vgs
255 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
9500 pF @ 50 V
Power Dissipation (Max)
441W (Tc)
Operating Temperature
-55 ℃ ~ 175 ℃ (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
