Technical Parameter
Diode Type
Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max)
1700 V
Current - Average Rectified (Io)
136A
Voltage - Forward (Vf) (Max) @ If
1.8 V @ 50 A
Speed
No Recovery Time >500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
200 μA @ 1700 V
Capacitance @ Vr, F
4450pF @ 1V, 1MHz
Mounting Type
Through Hole
Supplier Device Package
TO-247-3
Operating Temperature - Junction
-55 ℃ ~ 175 ℃
