Technical Parameter
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25℃
11A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V
Rds On (Max) @ Id, Vgs
275mOhm @ 5.5A, 10V
Gate Charge (Qg) (Max) @ Vgs
21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1020 pF @ 20 V
Power Dissipation (Max)
1W (Ta), 35W (Tc)
Operating Temperature
150 ℃ (TJ)
Mounting Type
Through Hole
Supplier Device Package
IPAK/TP
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
