Product Overview

The Infineon Technologies IR2104STRPBF is a high-voltage, high-speed power MOSFET and IGBT driver designed specifically for half-bridge configurations. It is widely used in power electronics applications where efficient and reliable driving of high- and low-side power transistors is critical, such as motor control, power supplies, and DC-DC converters. The IR2104 integrates level shifting and high-side floating driver technology to simplify the implementation of half-bridge circuits with bootstrap operation. It supports a wide operating voltage range and features built-in protection and timing controls to optimize switching performance and system reliability.

Key Features

* High Voltage Capability: Supports up to 500 V on the high-side floating supply
* Wide Supply Voltage Range: 10 V to 20 V (VCC), 10 V to 600 V (VB)
* Output Drive Capability: 2 A source and 3 A sink peak current per channel
* High Speed: Typical propagation delay around 120 ns
* Floating Channel Designed for Bootstrap Operation: Drives high-side N-channel MOSFET or IGBT
* Integrated Dead-Time Generator: Prevents shoot-through by inserting dead-time between high and low-side switching
* Under-Voltage Lockout (UVLO): Separate UVLO on both high-side and low-side drivers to prevent malfunction at low voltages
* Logic-Level Inputs: TTL and CMOS compatible with 3.3 V or 5 V logic
* Low Quiescent Current: Typically 1.5 mA in operation
* Low Power Dissipation: Improves efficiency in high switching frequency applications
* Wide Operating Temperature Range: –40°C to +125°C
* Package: 8-pin SOIC (Surface Mount) and SO-8

Applications

* Motor control (BLDC, PMSM, DC motors)
* Class D audio amplifiers
* DC-DC converters and power supplies
* Lighting ballasts and LED drivers
* Industrial inverters and UPS systems
* Welding and induction heating equipment

Electrical Specifications

| Parameter | Typical Value / Range |
| -------------------------------------- | ------------------------------------- |
| High-Side Floating Supply Voltage (VB) | 10 V to 600 V |
| Low-Side Supply Voltage (VCC) | 10 V to 20 V |
| Output Peak Source Current | 2 A |
| Output Peak Sink Current | 3 A |
| Propagation Delay (High to Low) | 120 ns (typical) |
| Input Logic Voltage | 3 V to 20 V |
| Under-Voltage Lockout Threshold | 8.2 V (typical) for VCC |
| Operating Temperature Range | –40°C to +125°C |
| Input Logic Low Voltage | 0.8 V max |
| Input Logic High Voltage | 2.0 V min |
| Quiescent Current | 1.5 mA |
| Maximum Switching Frequency | Up to 500 kHz (application-dependent) |

Functional Description

The IR2104STRPBF contains two output drivers: a high-side floating driver and a low-side driver. The high-side driver is level shifted and powered by a bootstrap circuit, allowing it to drive an N-channel MOSFET or IGBT in the high-side position. The low-side driver controls the low-side transistor directly from the logic supply voltage.

The device’s input stage accepts a single input logic signal (HIN) that controls the high-side switch and an inverted input (LIN) for the low-side switch, allowing complementary outputs with built-in dead-time insertion to avoid cross-conduction (shoot-through). The dead-time is internally fixed, simplifying design and ensuring safe switching.

The integrated under-voltage lockout circuits monitor the supply voltages on both the high-side floating supply and the low-side supply, preventing gate drive signals when voltages are too low, thereby avoiding incomplete switching and potential device damage.

Bootstrap Operation

The IR2104 utilizes an external bootstrap diode and capacitor to supply the high-side driver. This bootstrap circuitry charges the bootstrap capacitor from the low-side supply when the low-side MOSFET is on, providing the floating supply voltage for the high-side driver during its conduction interval. The device’s internal high-voltage level shifter manages this floating supply seamlessly.

Pin Configuration (SOIC-8)

* VB (Pin 1): High-side floating supply voltage
* HO (Pin 7): High-side driver output to gate of the high-side MOSFET
* VS (Pin 8): High-side floating supply return (source connection of high-side MOSFET)
* VCC (Pin 3): Low-side driver supply voltage
* COM (Pin 4): Low-side driver ground reference
* LO (Pin 5): Low-side driver output to gate of low-side MOSFET
* HIN (Pin 2): High-side driver logic input
* LIN (Pin 6): Low-side driver logic input

Protection Features

* Under-Voltage Lockout (UVLO): Both high-side and low-side drivers have independent UVLO to ensure reliable switching only occurs when the supply voltages are sufficient.
* Cross-Conduction Prevention: Dead-time insertion between complementary outputs prevents simultaneous conduction of high and low-side MOSFETs.
* Thermal Considerations: Although the device itself does not include internal thermal shutdown, it is designed to operate reliably in extended temperature ranges with proper PCB thermal design.

Timing Characteristics

The internal dead-time is approximately 500 ns to 700 ns, depending on supply conditions, which provides adequate margin to avoid shoot-through while minimizing switching losses. Propagation delays for rising and falling edges are closely matched to improve switching symmetry and minimize EMI.

Typical Application Circuit

The IR2104 is typically used with a bootstrap diode and capacitor connected between VCC and VB/VS pins to create the floating high-side supply. The logic inputs are driven by a microcontroller or digital signal processor that provides complementary signals to control the half-bridge power stage. Gate resistors and source capacitors may be added to optimize switching speed and reduce ringing.

Summary

The Infineon IR2104STRPBF is a robust, high-speed half-bridge gate driver tailored for high-voltage N-channel MOSFET or IGBT control in a variety of power electronics applications. Its integrated bootstrap driver, dead-time control, and UVLO features simplify half-bridge designs while improving safety and efficiency. Compact packaging and high drive currents make it suitable for demanding industrial and automotive environments requiring precise and reliable gate control.