SFH615AA-X007
SFH615AA-X007
Active
Description:  OPTOISOLATOR 5.3KV TRANS 4SMD
Manufacturer:  Vishay
History Price: $0.8
In Stock: 48500
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SFH615AA-X007 Specification
Specification
Mfr Part
SFH615AA-X007
Category
Optoisolators - Transistor, Photovoltaic Output Optoisolators
Manufacturer
Vishay
Series
-
Packaging
Tube
Status
Active
Environmental Compliance
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant
HS Code
-
Technical Parameter
Number of Channels
1
Voltage - Isolation
5300Vrms
Current Transfer Ratio (Min)
50% @ 5mA
Current Transfer Ratio (Max)
600% @ 5mA
Turn On / Turn Off Time (Typ)
2µs, 25µs
Rise / Fall Time (Typ)
-
Input Type
DC
Output Type
Transistor
Voltage - Output (Max)
70V
Current - Output / Channel
50mA
Voltage - Forward (Vf) (Typ)
1.25V
Current - DC Forward (If) (Max)
60 mA
Vce Saturation (Max)
400mV
Operating Temperature
-55 ℃ ~ 100 ℃
Mounting Type
Surface Mount
Package / Case
4-SMD, Gull Wing
Supplier Device Package
4-SMD
SFH615AA-X007 PDF Datasheet
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SFH615AA-X007 Description

## Overview

The Vishay SFH615AA-X007 is a high-speed infrared emitter designed for use in optical communication and sensing applications. It is part of Vishay’s SFH615 series and provides a robust infrared light source optimized for pulse operation. This device features a GaAsP (Gallium Arsenide Phosphide) emitter in a T-1 3/4 (5 mm) package with a clear lens, enabling precise light emission and efficient coupling with optical systems. It is suitable for high-speed switching, remote controls, optoelectronic encoders, and other communication applications requiring short rise and fall times.

## Absolute Maximum Ratings

* Forward Current (Continuous): 50 mA
* Peak Forward Current (Pulse, 100 μs, 1% duty cycle): 500 mA
* Reverse Voltage: 5 V
* Power Dissipation: 100 mW
* Operating Temperature Range: -40 °C to +85 °C
* Storage Temperature Range: -40 °C to +100 °C

These ratings indicate the operational boundaries of the device to prevent damage or degradation over time. Exceeding these limits can result in permanent damage to the emitter.

## Electrical and Optical Characteristics

* Forward Voltage (VF): 1.2 V typical at 20 mA forward current
* Reverse Current (IR): ≤ 100 μA at 5 V reverse voltage
* Radiant Intensity (IE): 100 mW/sr typical at 20 mA forward current
* Peak Wavelength (λp): 950 nm typical
* Spectral Bandwidth (Δλ): ±30 nm
* Viewing Angle (2θ1/2): 18° typical

The emitter operates efficiently in the near-infrared spectrum, making it compatible with phototransistor receivers and photodiode sensors used in optical communication or remote sensing applications.

## Dynamic and Switching Characteristics

* Rise Time (tr): ≤ 15 ns
* Fall Time (tf): ≤ 15 ns
* Junction Capacitance (Ct): 35 pF typical at 0 V reverse bias, 1 MHz

These characteristics enable high-speed pulse operation, supporting data transmission at significant rates while maintaining signal integrity. Low junction capacitance reduces signal distortion during rapid switching.

## Package and Mechanical Data

* Package Type: T-1 3/4 (5 mm) round epoxy package
* Lens Color: Clear
* Lead Material: Axial tinned copper leads
* Emitter Type: GaAsP infrared diode
* Polarity: Anode connected to longer lead, cathode connected to shorter lead

The compact package allows easy integration into standard PCB layouts and alignment with optical receivers. The clear lens ensures a narrow beam for directed emission.

## Applications

* Remote control systems and infrared communication
* Optoelectronic encoders and sensors
* Industrial automation requiring infrared pulse sources
* Optical data transmission systems
* High-speed switching applications in communication devices

The SFH615AA-X007 is particularly suited for pulsed IR applications where short rise and fall times and moderate radiant intensity are critical for accurate signal detection.

## Thermal Management Considerations

* Maximum forward current and power dissipation must be observed to prevent junction overheating.
* Pulse operation with low duty cycles is recommended to maintain junction temperature within safe limits.
* PCB heat sinking can enhance reliability during repetitive pulsed operation.

Proper thermal design ensures stable performance and prolongs the operational lifetime of the device.

## Reliability and Lifespan

* The device is encapsulated in a durable epoxy lens, providing protection against mechanical stress and environmental conditions.
* Degradation in radiant intensity is minimal under rated operating conditions.
* The GaAsP emitter maintains consistent performance over extended periods, ensuring reliability in industrial and communication systems.

This combination of high-speed performance, directional emission, and robust packaging makes the SFH615AA-X007 a reliable choice for demanding optoelectronic applications.
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  • Customer Reviews
    4.95 out of 5.00 stars from 51 customer reviews from all over the world
    Martín Pacheco
    Spain
    5 stars
    2025-02-24 06:26
    All perfect thank you
    Hans Müller
    Germany
    5 stars
    2025-02-24 06:05
    I'm very satisfied. Good product as promised and fast delivery. The seller is trustworthy. I will buy from this shop again.
    Anaïs Lemoine
    France
    5 stars
    2025-02-24 04:50
    10mOhms RDSon @6V VGS instead of 3mOhms as per datasheet, unlikely genuine, but good for the price
    Patricia
    Spain
    5 stars
    2025-02-24 04:39
    Sent very fast, the good quality transistors.
    Vanessa Lima Ferreira
    Brazil
    5 stars
    2025-02-24 03:25
    Worked in X99 Bd4
    Adriana
    Brazil
    5 stars
    2025-02-24 01:48
    Great product. Recommend to everyone.