SFH692AT
SFH692AT
Obsolete
Description:  OPTOISO 3.75KV DARLINGTON 4SOP
Manufacturer:  Vishay
Datasheet:   SFH692AT Datasheet
History Price: Obsolete
In Stock: 31100
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40300
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Jan 19, 2026
SFH692AT Specification
Specification
Mfr Part
SFH692AT
Category
Optoisolators - Transistor, Photovoltaic Output Optoisolators
Manufacturer
Vishay
Series
-
Packaging
Tape & Reel (TR)
Status
Obsolete
Environmental Compliance
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant
HS Code
-
Technical Parameter
Number of Channels
1
Voltage - Isolation
3750Vrms
Current Transfer Ratio (Min)
1000% @ 1mA
Current Transfer Ratio (Max)
-
Turn On / Turn Off Time (Typ)
1.5µs, 53.5µs
Rise / Fall Time (Typ)
1µs, 20.5µs
Input Type
DC
Output Type
Darlington
Voltage - Output (Max)
300V
Current - Output / Channel
50mA
Voltage - Forward (Vf) (Typ)
1.2V
Current - DC Forward (If) (Max)
50 mA
Vce Saturation (Max)
1V
Operating Temperature
-55 ℃ ~ 100 ℃
Mounting Type
Surface Mount
Package / Case
4-SMD, Gull Wing
Supplier Device Package
4-SOP (2.54mm)
SFH692AT PDF Datasheet
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SFH692AT Description

## Overview

The Vishay SFH692AT is a high-speed infrared emitter specifically designed for optical communication applications. It is optimized for pulse operation and is commonly used in data transmission systems, remote control devices, and optoelectronic sensor systems. The device is a GaAs infrared emitter packaged in a standard T-1 3/4 (5 mm) package with a clear epoxy lens, enabling focused emission and efficient coupling to optical systems.

## Absolute Maximum Ratings

* Forward Current (Continuous): 100 mA
* Peak Forward Current (Pulse, 100 μs, 1% duty cycle): 1 A
* Reverse Voltage: 5 V
* Power Dissipation: 150 mW
* Operating Temperature Range: -40 °C to +85 °C
* Storage Temperature Range: -40 °C to +100 °C

These limits define the safe operating boundaries and must not be exceeded to ensure reliable performance.

## Electrical and Optical Characteristics

* Forward Voltage (VF): 1.35 V typical at 20 mA forward current
* Reverse Current (IR): ≤ 100 μA at 5 V reverse voltage
* Radiant Intensity (IE): 200 mW/sr typical at 50 mA forward current
* Peak Wavelength (λp): 950 nm typical
* Spectral Bandwidth (Δλ): ±30 nm
* Viewing Angle (2θ1/2): 18° typical

The device operates efficiently in the near-infrared range, making it suitable for optical communication applications where high modulation speed is required.

## Dynamic and Switching Characteristics

* Rise Time (tr): ≤ 15 ns
* Fall Time (tf): ≤ 15 ns
* Capacitance (Ct): 40 pF typical at 0 V reverse bias, 1 MHz

These fast switching characteristics allow the SFH692AT to support high data rates, with low junction capacitance minimizing signal distortion.

## Package and Mechanical Data

* Package Type: T-1 3/4 (5 mm) round epoxy package
* Lead Material: Axial leads, tinned copper
* Lens Color: Clear
* Emitter Type: GaAs infrared diode
* Polarity: Anode and cathode clearly marked, with anode connected to the longer lead

The mechanical configuration allows straightforward PCB mounting and optical alignment in systems requiring directional infrared emission.

## Applications

* Infrared remote control systems
* Optical data transmission
* Optoelectronic sensors and encoders
* High-speed switching in communication devices
* Industrial automation requiring pulsed infrared sources

The combination of high-speed switching, directional emission, and robust packaging makes the SFH692AT a reliable choice for demanding optical communication environments.

## Thermal Management Considerations

* The maximum forward current and power dissipation ratings necessitate proper heat management in continuous operation.
* Pulse operation with low duty cycles is preferred to maintain junction temperature below maximum ratings.
* Mounting on a PCB with adequate copper area can assist in heat dissipation, enhancing device reliability.

## Reliability and Lifespan

* The SFH692AT is designed for long-term reliability under specified electrical and thermal conditions.
* Degradation of radiant intensity over time is minimal when operating within absolute maximum ratings.
* Encapsulation protects the GaAs emitter from environmental factors, including moisture and mechanical stress.

This combination of features ensures stable performance across a range of environmental conditions and application scenarios.
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  • Customer Reviews
    4.95 out of 5.00 stars from 91 customer reviews from all over the world
    Hans Müller
    Germany
    5 stars
    2025-02-24 06:05
    I'm very satisfied. Good product as promised and fast delivery. The seller is trustworthy. I will buy from this shop again.
    Anaïs Lemoine
    France
    5 stars
    2025-02-24 04:50
    10mOhms RDSon @6V VGS instead of 3mOhms as per datasheet, unlikely genuine, but good for the price
    Patricia
    Spain
    5 stars
    2025-02-24 04:39
    Sent very fast, the good quality transistors.
    Vanessa Lima Ferreira
    Brazil
    5 stars
    2025-02-24 03:25
    Worked in X99 Bd4
    Adriana
    Brazil
    5 stars
    2025-02-24 01:48
    Great product. Recommend to everyone.
    Esteban Ruiz
    Spain
    5 stars
    2025-02-24 01:32
    All as usual on top!!!