CSD13302WT
CSD13302WT
Active
Description:  MOSFET N-CH 12V 1.6A 4DSBGA
Manufacturer:  Texas Instruments
Datasheet:   CSD13302WT Datasheet
History Price: $0.97000
In Stock: 8100
CSD13302WT vs CSD25501F3
Series
NexFET
FemtoFET
Packaging
Tape & Reel (TR)
Tape & Reel (TR)
Status
Active
Active
FET Type
N-Channel
P-Channel
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
12 V
20 V
Current - Continuous Drain (Id) @ 25℃
1.6A (Ta)
3.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
17.1mOhm @ 1A, 4.5V
76mOhm @ 400mA, 4.5V
Vgs(th) (Max) @ Id
1.3V @ 250μA
1.05V @ 250μA
Gate Charge (Qg) (Max) @ Vgs
7.8 nC @ 4.5 V
1.33 nC @ 4.5 V
Vgs (Max)
?0V
-20V
Input Capacitance (Ciss) (Max) @ Vds
862 pF @ 6 V
385 pF @ 10 V
FET Feature
-
-
Power Dissipation (Max)
1.8W (Ta)
500mW (Ta)
Operating Temperature
-55 ℃ ~ 150 ℃ (TJ)
-55 ℃ ~ 150 ℃ (TJ)
Mounting Type
Surface Mount
Surface Mount
Supplier Device Package
4-DSBGA (1x1)
3-LGA (0.73x0.64)
Package / Case
4-UFBGA, DSBGA
3-XFLGA