Packaging
Bag
Tape & Box (TB)
FET Type
N-Channel
N-Channel
Voltage - Breakdown (V(BR)GSS)
30 V
40 V
Drain to Source Voltage (Vdss)
-
-
Current - Drain (Idss) @ Vds (Vgs=0)
-
15 mA @ 20 V
Current Drain (Id) - Max
-
-
Voltage - Cutoff (VGS off) @ Id
-
2 V @ 1 nA
Input Capacitance (Ciss) (Max) @ Vds
14pF @ 20V
16pF @ 20V
Resistance - RDS(On)
100 Ohms
50 Ohms
Power - Max
625 mW
625 mW
Operating Temperature
-55 ℃ ~ 150 ℃ (TJ)
-55 ℃ ~ 150 ℃ (TJ)
Mounting Type
Through Hole
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package
TO-92-3
TO-92-3
