Driven Configuration
High-Side or Low-Side
Half-Bridge
Channel Type
Independent
Independent
Gate Type
N-Channel MOSFET
IGBT, N-Channel MOSFET
Voltage - Supply
10V ~ 20V
10V ~ 20V
Logic Voltage - VIL, VIH
0.7V, 2.2V
0.8V, 2.7V
Current - Peak Output (Source, Sink)
1A, 1A
1.9A, 2.3A
Input Type
Inverting
Non-Inverting
High Side Voltage - Max (Bootstrap)
200 V
600 V
Rise / Fall Time (Typ)
35ns, 20ns
40ns, 20ns
Operating Temperature
-40 ℃ ~ 150 ℃ (TJ)
-40 ℃ ~ 150 ℃ (TJ)
Mounting Type
Through Hole
Surface Mount
Package / Case
8-DIP (0.300", 7.62mm)
14-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-PDIP
14-SOIC
