CSD25303W1015 Texas Instruments | Specification, Inventory, Distributors and Datasheet

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CSD25303W1015 Specification

Specification

Mfr Part

CSD25303W1015

Category

Transistors - FETs, MOSFETs - Single

Manufacturer

Texas Instruments

Series

NexFET

Packaging

Tape & Reel (TR)

Status

Obsolete

Environmental Compliance

Lead Free

Radiation Hardening

REACH SVHC

No SVHC

RoHS

Compliant

HS Code

Technical Parameter

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20 V

Current - Continuous Drain (Id) @ 25℃

3A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

58mOhm @ 1.5A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250μA

Gate Charge (Qg) (Max) @ Vgs

4.3 nC @ 4.5 V

Vgs (Max)

Input Capacitance (Ciss) (Max) @ Vds

435 pF @ 10 V

FET Feature

Power Dissipation (Max)

1.5W (Ta)

Operating Temperature

-55 ℃ ~ 150 ℃ (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-DSBGA (1x1.5)

Package / Case

6-UFBGA, DSBGA

CSD25303W1015 PDF Datasheet

CSD25303W1015 Datasheet

Click and Download: CSD25303W1015 Datasheet

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