Technical Parameter
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25℃
18A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
5mOhm @ 17A, 10V
Vgs(th) (Max) @ Id
2.25V @ 250μA
Gate Charge (Qg) (Max) @ Vgs
50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
4500 pF @ 20 V
Power Dissipation (Max)
2.5W (Ta)
Operating Temperature
-55 ℃ ~ 150 ℃ (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-SO
Package / Case
8-SOIC (0.154", 3.90mm Width)
